NXH50C120L2C2ESG

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Manufacturer part number:NXH50C120L2C2ESG

Manufacturer:ON Semiconductor

Description:NXH50C120L2C2ESG datasheet pdf and Transistors - IGBTs - Modules product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:NXH50C120L2C2ESG Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Through Hole
Package / Case	26-PowerDIP Module (1.199, 47.20mm)
Supplier Device Package	26-DIP
ECCN (US)	EAR99
HTS	8541.29.00.95
Maximum Collector-Emitter Voltage (V)	1200
Typical Collector Emitter Saturation Voltage (V)	1.8
Maximum Gate Emitter Voltage (V)	±20
Maximum Power Dissipation (mW)	20(Typ)
Maximum Continuous Collector Current (A)	50
Maximum Gate Emitter Leakage Current (uA)	0.4
Minimum Operating Temperature (°C)	-40
Maximum Operating Temperature (°C)	150
AEC Qualified	No
Supplier Package	DIP
Military	No
Mounting	Through Hole
Package Height	8
Package Length	73.2
Package Width	40.2
PCB changed	26
Package Type	DIP26
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 40 C
Manufacturer	onsemi
Brand	onsemi
RoHS	Details
Package	Tube
Base Product Number	NXH50
Mfr	onsemi
Product Status	Active
Packaging	Tube
Operating Temperature	-40°C ~ 150°C (TJ)
Series	-
Part Status	Active
Subcategory	IGBTs
Pin Count	26
Configuration	Hex
Power Dissipation	-
Power - Max	20 mW
Input	Three Phase Bridge Rectifier
Product Type	IGBT Modules
Current - Collector Cutoff (Max)	250 µA
Voltage - Collector Emitter Breakdown (Max)	1200 V
Current - Collector (Ic) (Max)	50 A
Collector Emitter Saturation Voltage	1.8
Channel Type	N
Vce(on) (Max) @ Vge, Ic	2.4V @ 15V, 50A
Continuous Collector Current	50
IGBT Type	-
NTC Thermistor	Yes
Input Capacitance (Cies) @ Vce	11.897 nF @ 20 V
Product	IGBT Silicon Modules
Product Category	IGBT Modules
RoHS Status	RoHS Compliant