FS50R12W2T4BOMA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
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FS50R12W2T4BOMA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
16 Weeks
Contact Plating
Tin
Mount
Screw
Mounting Type
Chassis Mount
Package / Case
Module
Number of Pins
18
Transistor Element Material
SILICON
Operating Temperature
-40°C~125°C
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
15
ECCN Code
EAR99
Max Power Dissipation
335W
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
33
JESD-30 Code
R-XUFM-X15
Qualification Status
Not Qualified
Number of Elements
6
Configuration
Full Bridge Inverter
Power Dissipation
335W
Case Connection
ISOLATED
Transistor Application
POWER CONTROL
Polarity/Channel Type
N-CHANNEL
Input
Standard
Collector Emitter Voltage (VCEO)
1.2kV
Max Collector Current
83A
Current - Collector Cutoff (Max)
1mA
Collector Emitter Breakdown Voltage
1.2kV
Voltage - Collector Emitter Breakdown (Max)
1200V
Collector Emitter Saturation Voltage
1.85V
Turn On Time
185 ns
Vce(on) (Max) @ Vge, Ic
2.15V @ 15V, 50A
Turn Off Time-Nom (toff)
490 ns
IGBT Type
Trench Field Stop
NTC Thermistor
Yes
Input Capacitance (Cies) @ Vce
2.8nF @ 25V
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$30.837120
$30.83712
10
$29.091623
$290.91623
100
$27.444927
$2744.4927
500
$25.891441
$12945.7205
1000
$24.425887
$24425.887
FS50R12W2T4BOMA1 Product Details
FS50R12W2T4BOMA1 Description
FS50R12W2T4BOMA1, supplied by Utmel Electronics and made by Infineon Technologies. It falls within the category of electronic components, ICs.
It is used in a wide range of industries, including wireless infrastructure, connected peripherals, printers, and automotive infotainment & cluster.
And the primary criteria for this component are: Operating temperature range: -40°C to +150°C; Vces:1.85V; Power Dissipation Pd:335W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Type: Module; Number of Pins: 18; SVHC Status: No SVHC (19-Dec-2011); Maximum Power Dissipation: 335W.
It is also environmentally friendly and RoHS compliant (lead free).