APTGT150A120T3AG

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Manufacturer part number:APTGT150A120T3AG

Manufacturer:Microsemi Corporation

Description:IGBT MODULE 1200V 220A 833W SP3

Case Package:SOT-23

Datasheet:APTGT150A120T3AG Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	36 Weeks
Mount	Chassis Mount, Screw
Mounting Type	Chassis Mount
Package / Case	SP3
Number of Pins	20
Transistor Element Material	SILICON
Operating Temperature	-40°C~150°C TJ
Published	2009
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	10
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	833W
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	25
JESD-30 Code	R-XUFM-X10
Qualification Status	Not Qualified
Number of Elements	2
Configuration	Half Bridge
Element Configuration	Dual
Case Connection	ISOLATED
Power - Max	833W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Input	Standard
Collector Emitter Voltage (VCEO)	1.2kV
Max Collector Current	220A
Current - Collector Cutoff (Max)	250μA
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Input Capacitance	10.7nF
Turn On Time	335 ns
Vce(on) (Max) @ Vge, Ic	2.1V @ 15V, 150A
Turn Off Time-Nom (toff)	610 ns
IGBT Type	Trench Field Stop
NTC Thermistor	Yes
Input Capacitance (Cies) @ Vce	10.7nF @ 25V
VCEsat-Max	2.1 V
RoHS Status	RoHS Compliant