APTGT50DH60T1G

new-10%

Manufacturer part number:APTGT50DH60T1G

Manufacturer:Microsemi Corporation

Description:Trans IGBT Module N-CH 600V 80A 10-Pin Case SP-1

Case Package:SOT-23

Datasheet:APTGT50DH60T1G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	36 Weeks
Mount	Chassis Mount, Screw
Mounting Type	Chassis Mount
Package / Case	SP1
Number of Pins	10
Transistor Element Material	SILICON
Operating Temperature	-40°C~175°C TJ
Published	2012
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	9
ECCN Code	EAR99
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	176W
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Pin Count	12
JESD-30 Code	R-XUFM-X9
Number of Elements	2
Configuration	Asymmetrical Bridge
Element Configuration	Dual
Case Connection	ISOLATED
Power - Max	176W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Input	Standard
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	80A
Current - Collector Cutoff (Max)	250μA
Collector Emitter Breakdown Voltage	600V
Input Capacitance	3.15nF
Turn On Time	170 ns
Vce(on) (Max) @ Vge, Ic	1.9V @ 15V, 50A
Turn Off Time-Nom (toff)	310 ns
IGBT Type	Trench Field Stop
NTC Thermistor	Yes
Gate-Emitter Voltage-Max	20V
Input Capacitance (Cies) @ Vce	3.15nF @ 25V
VCEsat-Max	1.9 V
Radiation Hardening	No
RoHS Status	RoHS Compliant