APTGT50H60RT3G

new-10%

Manufacturer part number:APTGT50H60RT3G

Manufacturer:Microsemi Corporation

Description:POWER MOD IGBT3 FULL BRIDGE SP3

Case Package:SOT-23

Datasheet:APTGT50H60RT3G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	36 Weeks
Mount	Chassis Mount, Screw
Mounting Type	Chassis Mount
Package / Case	SP3
Number of Pins	32
Published	1999
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN Code	EAR99
Max Operating Temperature	175°C
Min Operating Temperature	-40°C
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	176W
Number of Elements	1
Configuration	Full Bridge Inverter
Input	Single Phase Bridge Rectifier
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	80A
Current - Collector Cutoff (Max)	250μA
Collector Emitter Breakdown Voltage	600V
Input Capacitance	3.15nF
Vce(on) (Max) @ Vge, Ic	1.9V @ 15V, 50A
IGBT Type	Trench Field Stop
NTC Thermistor	Yes
Gate-Emitter Voltage-Max	20V
Input Capacitance (Cies) @ Vce	3.15nF @ 25V
VCEsat-Max	1.9 V
Radiation Hardening	No
RoHS Status	RoHS Compliant