IXGN82N120C3H1

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Manufacturer part number:IXGN82N120C3H1

Manufacturer:IXYS

Description:IGBT MOD 1200V 130A 595W SOT227B

Case Package:SOT-23

Datasheet:IXGN82N120C3H1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Mount	Chassis Mount, Screw
Mounting Type	Chassis Mount
Package / Case	SOT-227-4, miniBLOC
Number of Pins	4
Operating Temperature	-55°C~150°C TJ
Published	2009
Series	GenX3™
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	595W
Number of Elements	1
Configuration	Single
Power - Max	595W
Input	Standard
Collector Emitter Voltage (VCEO)	3.9V
Max Collector Current	130A
Current - Collector Cutoff (Max)	50μA
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Input Capacitance	7.9nF
Vce(on) (Max) @ Vge, Ic	3.9V @ 15V, 82A
IGBT Type	PT
NTC Thermistor	No
Gate-Emitter Voltage-Max	20V
Input Capacitance (Cies) @ Vce	7.9nF @ 25V
RoHS Status	ROHS3 Compliant