APTGV100H60T3G

new-10%

Manufacturer part number:APTGV100H60T3G

Manufacturer:Microsemi Corporation

Description:Trans IGBT Module N-CH 600V 150A/150A/110A/110A 32-Pin Case SP-3

Case Package:SOT-23

Datasheet:APTGV100H60T3G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Chassis Mount, Screw
Mounting Type	Chassis Mount
Package / Case	SP3
Number of Pins	3
Transistor Element Material	SILICON
Published	2007
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	25
ECCN Code	EAR99
Terminal Finish	TIN SILVER COPPER
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	340W
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	25
JESD-30 Code	R-XUFM-X25
Qualification Status	Not Qualified
Operating Temperature (Max)	150°C
Number of Elements	4
Configuration	Full Bridge Inverter
Case Connection	ISOLATED
Power - Max	340W
Polarity/Channel Type	N-CHANNEL
Input	Standard
Collector Emitter Voltage (VCEO)	1.9V
Max Collector Current	150A
Current - Collector Cutoff (Max)	250μA
Collector Emitter Breakdown Voltage	600V
Input Capacitance	6.1nF
Turn On Time	180 ns
Vce(on) (Max) @ Vge, Ic	1.9V @ 15V, 100A
Turn Off Time-Nom (toff)	370 ns
IGBT Type	NPT, Trench Field Stop
NTC Thermistor	Yes
Gate-Emitter Voltage-Max	20V
Input Capacitance (Cies) @ Vce	6.1nF @ 25V
RoHS Status	RoHS Compliant