APTGT20A60T1G

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Manufacturer part number:APTGT20A60T1G

Manufacturer:Microsemi Corporation

Description:Trans IGBT Module N-CH 600V 32A 12-Pin Case SP-1

Case Package:SOT-23

Datasheet:APTGT20A60T1G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Chassis Mount
Mounting Type	Chassis Mount
Package / Case	SP1
Number of Pins	1
Transistor Element Material	SILICON
Operating Temperature	-40°C~175°C TJ
Published	2007
JESD-609 Code	e1
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	12
Terminal Finish	Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	62W
Terminal Position	UPPER
Terminal Form	THROUGH-HOLE
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	unknown
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	12
Qualification Status	Not Qualified
Number of Elements	2
Configuration	Half Bridge
Element Configuration	Dual
Case Connection	ISOLATED
Power - Max	62W
Transistor Application	MOTOR CONTROL
Polarity/Channel Type	N-CHANNEL
Input	Standard
Collector Emitter Voltage (VCEO)	1.9V
Max Collector Current	32A
Current - Collector Cutoff (Max)	250μA
Collector Emitter Breakdown Voltage	600V
Input Capacitance	1.1nF
Turn On Time	170 ns
Vce(on) (Max) @ Vge, Ic	1.9V @ 15V, 20A
Turn Off Time-Nom (toff)	310 ns
IGBT Type	Trench Field Stop
NTC Thermistor	Yes
Gate-Emitter Voltage-Max	20V
Input Capacitance (Cies) @ Vce	1.1nF @ 25V
RoHS Status	RoHS Compliant