APTM100H45SCTG

new-10%

Manufacturer part number:APTM100H45SCTG

Manufacturer:Microsemi Corporation

Description:MOSFET 4N-CH 1000V 18A SP4

Case Package:SOT-23

Datasheet:APTM100H45SCTG Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	22 Weeks
Lifecycle Status	IN PRODUCTION (Last Updated: 3 weeks ago)
Mount	Chassis Mount, Screw
Mounting Type	Chassis Mount
Package / Case	SP4
Number of Pins	4
Transistor Element Material	SILICON
Operating Temperature	-40°C~150°C TJ
Packaging	Bulk
Published	1997
Series	POWER MOS 7®
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	14
ECCN Code	EAR99
Terminal Finish	TIN SILVER COPPER
Additional Feature	AVALANCHE RATED
Max Power Dissipation	357W
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	14
Qualification Status	Not Qualified
Number of Elements	4
Operating Mode	ENHANCEMENT MODE
Power Dissipation	357W
Case Connection	ISOLATED
Turn On Delay Time	10 ns
FET Type	4 N-Channel (H-Bridge)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	540m Ω @ 9A, 10V
Vgs(th) (Max) @ Id	5V @ 2.5mA
Input Capacitance (Ciss) (Max) @ Vds	4350pF @ 25V
Gate Charge (Qg) (Max) @ Vgs	154nC @ 10V
Rise Time	12ns
Drain to Source Voltage (Vdss)	1000V 1kV
Fall Time (Typ)	35 ns
Turn-Off Delay Time	121 ns
Continuous Drain Current (ID)	18A
Gate to Source Voltage (Vgs)	30V
Pulsed Drain Current-Max (IDM)	72A
DS Breakdown Voltage-Min	1000V
Avalanche Energy Rating (Eas)	2500 mJ
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Standard
RoHS Status	RoHS Compliant