SI4909DY-T1-GE3

new-10%

Manufacturer part number:SI4909DY-T1-GE3

Manufacturer:Vishay Siliconix

Description:VISHAY - SI4909DY-T1-GE3 - MOSFET, PP-KANAL, W/D DIOD, 40V, 8A, SO8

Case Package:SOT-23

Datasheet:SI4909DY-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Supplier Device Package	8-SO
Weight	506.605978mg
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2014
Series	TrenchFET®
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	3.2W
Number of Elements	2
Number of Channels	2
Element Configuration	Dual
Power Dissipation	2W
Turn On Delay Time	10 ns
Power - Max	3.2W
FET Type	2 P-Channel (Dual)
Rds On (Max) @ Id, Vgs	27mOhm @ 8A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2000pF @ 20V
Current - Continuous Drain (Id) @ 25°C	8A
Gate Charge (Qg) (Max) @ Vgs	63nC @ 10V
Rise Time	9ns
Drain to Source Voltage (Vdss)	40V
Fall Time (Typ)	13 ns
Turn-Off Delay Time	50 ns
Continuous Drain Current (ID)	-8A
Threshold Voltage	-1.2V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	-40V
Input Capacitance	2nF
Max Junction Temperature (Tj)	150°C
FET Feature	Logic Level Gate
Drain to Source Resistance	21mOhm
Rds On Max	27 mΩ
Height	1.75mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free