APTM100UM65DAG

new-10%

Manufacturer part number:APTM100UM65DAG

Manufacturer:Microsemi Corporation

Description:MOSFET N-CH 1000V 145A SP6

Case Package:SOT-23

Datasheet:APTM100UM65DAG Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	36 Weeks
Mount	Chassis Mount, Screw
Mounting Type	Chassis Mount
Package / Case	SP6
Number of Pins	6
Transistor Element Material	SILICON
Operating Temperature	-40°C~150°C TJ
Packaging	Bulk
Published	1999
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	TIN SILVER COPPER
Additional Feature	AVALANCHE RATED
Technology	MOSFET (Metal Oxide)
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Pin Count	2
JESD-30 Code	R-PUFM-X2
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	3250W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	ISOLATED
Turn On Delay Time	18 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	78m Ω @ 72.5A, 10V
Vgs(th) (Max) @ Id	5V @ 20mA
Input Capacitance (Ciss) (Max) @ Vds	28500pF @ 25V
Current - Continuous Drain (Id) @ 25°C	145A Tc
Gate Charge (Qg) (Max) @ Vgs	1068nC @ 10V
Rise Time	14ns
Drain to Source Voltage (Vdss)	1000V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	55 ns
Turn-Off Delay Time	140 ns
Continuous Drain Current (ID)	145A
Gate to Source Voltage (Vgs)	30V
Drain-source On Resistance-Max	0.078Ohm
Pulsed Drain Current-Max (IDM)	580A
Avalanche Energy Rating (Eas)	3200 mJ
Radiation Hardening	No
RoHS Status	RoHS Compliant