APTM10AM02FG

new-10%

Manufacturer part number:APTM10AM02FG

Manufacturer:Microsemi Corporation

Description:MOSFET 2N-CH 100V 495A SP6

Case Package:SOT-23

Datasheet:APTM10AM02FG Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Mount	Chassis Mount, Screw
Mounting Type	Chassis Mount
Package / Case	SP6
Number of Pins	6
Transistor Element Material	SILICON
Operating Temperature	-40°C~150°C TJ
Packaging	Bulk
Published	2012
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	7
ECCN Code	EAR99
Terminal Finish	TIN SILVER COPPER
Additional Feature	AVALANCHE RATED
Max Power Dissipation	1.25kW
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Pin Count	7
JESD-30 Code	R-XUFM-X7
Number of Elements	2
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.25kW
Case Connection	ISOLATED
Turn On Delay Time	160 ns
Power - Max	1250W
FET Type	2 N-Channel (Half Bridge)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	2.5m Ω @ 200A, 10V
Vgs(th) (Max) @ Id	4V @ 10mA
Input Capacitance (Ciss) (Max) @ Vds	40000pF @ 25V
Gate Charge (Qg) (Max) @ Vgs	1360nC @ 10V
Rise Time	240ns
Drain to Source Voltage (Vdss)	100V
Fall Time (Typ)	160 ns
Turn-Off Delay Time	500 ns
Continuous Drain Current (ID)	495A
Gate to Source Voltage (Vgs)	30V
Pulsed Drain Current-Max (IDM)	1900A
DS Breakdown Voltage-Min	100V
Avalanche Energy Rating (Eas)	3000 mJ
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Standard
Radiation Hardening	No
RoHS Status	RoHS Compliant