SI5908DC-T1-GE3

new-10%

Manufacturer part number:SI5908DC-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET 2N-CH 20V 4.4A 1206-8

Case Package:SOT-23

Datasheet:SI5908DC-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SMD, Flat Lead
Number of Pins	8
Weight	84.99187mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2015
Series	TrenchFET®
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Terminal Finish	Pure Matte Tin (Sn)
Additional Feature	ULTRA LOW RESISTANCE
Subcategory	FET General Purpose Powers
Max Power Dissipation	1.1W
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Base Part Number	SI5908
Pin Count	8
Number of Elements	2
Number of Channels	2
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Turn On Delay Time	20 ns
FET Type	2 N-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	40m Ω @ 4.4A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250μA
Gate Charge (Qg) (Max) @ Vgs	7.5nC @ 4.5V
Rise Time	36ns
Drain to Source Voltage (Vdss)	20V
Fall Time (Typ)	12 ns
Turn-Off Delay Time	30 ns
Continuous Drain Current (ID)	4.4A
Gate to Source Voltage (Vgs)	8V
Drain-source On Resistance-Max	0.04Ohm
Drain to Source Breakdown Voltage	20V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free