NVJD5121NT1G datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available on our website
SOT-23
NVJD5121NT1G Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
6 Weeks
Lifecycle Status
ACTIVE (Last Updated: 1 day ago)
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
6-TSSOP, SC-88, SOT-363
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2014
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Terminal Finish
Tin (Sn)
Max Power Dissipation
250mW
Number of Channels
2
Turn On Delay Time
22 ns
FET Type
2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs
1.6 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id
2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
26pF @ 20V
Gate Charge (Qg) (Max) @ Vgs
0.9nC @ 4.5V
Rise Time
34ns
Drain to Source Voltage (Vdss)
60V
Fall Time (Typ)
32 ns
Turn-Off Delay Time
34 ns
Continuous Drain Current (ID)
295mA
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
60V
FET Feature
Standard
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.763939
$0.763939
10
$0.720697
$7.20697
100
$0.679903
$67.9903
500
$0.641418
$320.709
1000
$0.605111
$605.111
NVJD5121NT1G Product Details
NVJD5121NT1G Description
Two specialized N-Channel MOSFETs are present in this device. The switch node has been internally connected to facilitate the insertion and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous MOSFET (Q2) have been built to provide optimal power efficiency.
NVJD5121NT1G Features
? Poor RDS (on)
? Reduced Gate Threshold
? Small Input Capacitors
? ESD Safeguarded Gate
? AEC-Q101 qualified and PPAP capable; NV Prefix for Automotive and Other Applications Requiring Special Site and Control Change Requirements
? This device is lead-free.
NVJD5121NT1G Applications
? Switch for Low Side Load
? Converters from DC to DC (Buck and Boost Circuits)