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APTM120DA68T1G

APTM120DA68T1G

APTM120DA68T1G

Microsemi Corporation

Trans MOSFET N-CH 1.2KV 15A 12-Pin Case SP-1

SOT-23

APTM120DA68T1G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case SP1
Number of Pins 1
Transistor Element Material SILICON
Operating Temperature -40°C~150°C TJ
Packaging Bulk
Published 2007
JESD-609 Code e1
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 12
Terminal Finish TIN SILVER COPPER
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 12
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE AND THERMISTOR
Power Dissipation-Max 357W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 357W
Case Connection ISOLATED
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 816m Ω @ 12A, 10V
Vgs(th) (Max) @ Id 5V @ 2.5mA
Input Capacitance (Ciss) (Max) @ Vds 6696pF @ 25V
Current - Continuous Drain (Id) @ 25°C 15A Tc
Gate Charge (Qg) (Max) @ Vgs 260nC @ 10V
Drain to Source Voltage (Vdss) 1200V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Continuous Drain Current (ID) 15A
Gate to Source Voltage (Vgs) 30V
Pulsed Drain Current-Max (IDM) 90A
RoHS Status RoHS Compliant

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