JAN2N6756

new-10%

Manufacturer part number:JAN2N6756

Manufacturer:Microsemi Corporation

Description:Trans MOSFET N-CH 100V 14A 3-Pin(2+Tab) TO-3

Case Package:SOT-23

Datasheet:JAN2N6756 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-204AA, TO-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Bulk
Published	1997
Series	Military, MIL-PRF-19500/542
JESD-609 Code	e0
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Tin/Lead (Sn/Pb)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	BOTTOM
Terminal Form	PIN/PEG
Pin Count	2
Reference Standard	MIL-19500/542G
JESD-30 Code	O-MBFM-P2
Qualification Status	Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	4W Ta 75W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Turn On Delay Time	35 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	210m Ω @ 14A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Current - Continuous Drain (Id) @ 25°C	14A Tc
Gate Charge (Qg) (Max) @ Vgs	35nC @ 10V
Rise Time	80ns
Drain to Source Voltage (Vdss)	100V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	45 ns
Turn-Off Delay Time	60 ns
Continuous Drain Current (ID)	14A
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.21Ohm
Pulsed Drain Current-Max (IDM)	56A
DS Breakdown Voltage-Min	100V
Radiation Hardening	No
RoHS Status	Non-RoHS Compliant