APTM50AM38STG

new-10%

Manufacturer part number:APTM50AM38STG

Manufacturer:Microsemi Corporation

Description:MOSFET 2N-CH 500V 90A SP4

Case Package:SOT-23

Datasheet:APTM50AM38STG Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Mount	Chassis Mount, Screw
Mounting Type	Chassis Mount
Package / Case	SP4
Number of Pins	4
Transistor Element Material	SILICON
Operating Temperature	-40°C~150°C TJ
Packaging	Bulk
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	10
ECCN Code	EAR99
Terminal Finish	TIN SILVER COPPER
Additional Feature	AVALANCHE ENERGY RATED
Max Power Dissipation	694W
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Pin Count	10
JESD-30 Code	R-XUFM-X10
Number of Elements	2
Operating Mode	ENHANCEMENT MODE
Power Dissipation	694W
Case Connection	ISOLATED
Turn On Delay Time	18 ns
FET Type	2 N-Channel (Half Bridge)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	45m Ω @ 45A, 10V
Vgs(th) (Max) @ Id	5V @ 5mA
Input Capacitance (Ciss) (Max) @ Vds	11200pF @ 25V
Gate Charge (Qg) (Max) @ Vgs	246nC @ 10V
Rise Time	35ns
Drain to Source Voltage (Vdss)	500V
Fall Time (Typ)	77 ns
Turn-Off Delay Time	87 ns
Continuous Drain Current (ID)	90A
Gate to Source Voltage (Vgs)	30V
Pulsed Drain Current-Max (IDM)	360A
DS Breakdown Voltage-Min	500V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Standard
Radiation Hardening	No
RoHS Status	RoHS Compliant