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APTM50SKM35TG

APTM50SKM35TG

APTM50SKM35TG

Microsemi Corporation

Trans MOSFET N-CH 500V 99A 20-Pin Case SP-4

SOT-23

APTM50SKM35TG Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case SP4
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature -40°C~150°C TJ
Packaging Bulk
Published 2016
JESD-609 Code e1
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 12
Terminal Finish TIN SILVER COPPER
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 12
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE AND THERMISTOR
Power Dissipation-Max 781W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 781W
Case Connection ISOLATED
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 39m Ω @ 49.5A, 10V
Vgs(th) (Max) @ Id 5V @ 5mA
Input Capacitance (Ciss) (Max) @ Vds 14000pF @ 25V
Current - Continuous Drain (Id) @ 25°C 99A Tc
Gate Charge (Qg) (Max) @ Vgs 280nC @ 10V
Drain to Source Voltage (Vdss) 500V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Continuous Drain Current (ID) 99A
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.039Ohm
Pulsed Drain Current-Max (IDM) 396A
DS Breakdown Voltage-Min 500V
Avalanche Energy Rating (Eas) 3000 mJ
RoHS Status RoHS Compliant

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