JAN2N1711 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 150mA 10V.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1.5V @ 15mA, 150mA.Keeping the emitter base voltage at 7V allows for a high level of efficiency.Single BJT transistor is possible to have a collector current as low as 500mA volts at Single BJT transistors maximum.
JAN2N1711 Features
the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1.5V @ 15mA, 150mA
the emitter base voltage is kept at 7V
JAN2N1711 Applications
There are a lot of Microsemi Corporation JAN2N1711 applications of single BJT transistors.
- Inverter
- Muting
- Interface
- Driver
