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JAN2N6437

JAN2N6437

JAN2N6437

Microsemi Corporation

JAN2N6437 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website

SOT-23

JAN2N6437 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 22 Weeks
Mount Through Hole
Number of Pins 3
Packaging Bulk
Published 2007
JESD-609 Code e0
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Max Operating Temperature 125°C
Min Operating Temperature -55°C
HTS Code 8541.29.00.95
Max Power Dissipation 200W
Terminal Position BOTTOM
Terminal Form PIN/PEG
Reference Standard MIL
JESD-30 Code O-MBFM-P2
Qualification Status Qualified
Polarity/Channel Type PNP
Collector Emitter Voltage (VCEO) 100V
Max Collector Current 25A
DC Current Gain-Min (hFE) 30
Radiation Hardening No
RoHS Status Non-RoHS Compliant
JAN2N6437 Product Details

JAN2N6437 Overview


In extreme cases, the collector current can be as low as 25A volts.

JAN2N6437 Features



JAN2N6437 Applications


There are a lot of Microsemi Corporation JAN2N6437 applications of single BJT transistors.

  • Inverter
  • Driver
  • Muting
  • Interface

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