JANTXV2N5416UA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website
SOT-23
JANTXV2N5416UA Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Lifecycle Status
IN PRODUCTION (Last Updated: 1 month ago)
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
4-SMD, No Lead
Number of Pins
4
Transistor Element Material
SILICON
Operating Temperature
-65°C~200°C TJ
Packaging
Bulk
Published
2007
Series
Military, MIL-PRF-19500/485
JESD-609 Code
e0
Pbfree Code
no
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
Terminal Position
DUAL
Qualification Status
Qualified
Number of Elements
1
Configuration
SINGLE
Case Connection
COLLECTOR
Power - Max
750mW
Transistor Application
SWITCHING
Polarity/Channel Type
PNP
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
30 @ 50mA 10V
Current - Collector Cutoff (Max)
1mA
Vce Saturation (Max) @ Ib, Ic
2V @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max)
300V
Current - Collector (Ic) (Max)
1A
Turn Off Time-Max (toff)
10000ns
Turn On Time-Max (ton)
1000ns
Radiation Hardening
No
RoHS Status
Non-RoHS Compliant
JANTXV2N5416UA Product Details
JANTXV2N5416UA Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 30 @ 50mA 10V DC current gain.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 2V @ 5mA, 50mA.Collector Emitter Breakdown occurs at 300VV - Maximum voltage.
JANTXV2N5416UA Features
the DC current gain for this device is 30 @ 50mA 10V the vce saturation(Max) is 2V @ 5mA, 50mA
JANTXV2N5416UA Applications
There are a lot of Microsemi Corporation JANTXV2N5416UA applications of single BJT transistors.