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JANTXV2N5416UA

JANTXV2N5416UA

JANTXV2N5416UA

Microsemi Corporation

JANTXV2N5416UA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website

SOT-23

JANTXV2N5416UA Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Lifecycle Status IN PRODUCTION (Last Updated: 1 month ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 4-SMD, No Lead
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature -65°C~200°C TJ
Packaging Bulk
Published 2007
Series Military, MIL-PRF-19500/485
JESD-609 Code e0
Pbfree Code no
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Position DUAL
Qualification Status Qualified
Number of Elements 1
Configuration SINGLE
Case Connection COLLECTOR
Power - Max 750mW
Transistor Application SWITCHING
Polarity/Channel Type PNP
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 50mA 10V
Current - Collector Cutoff (Max) 1mA
Vce Saturation (Max) @ Ib, Ic 2V @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max) 300V
Current - Collector (Ic) (Max) 1A
Turn Off Time-Max (toff) 10000ns
Turn On Time-Max (ton) 1000ns
Radiation Hardening No
RoHS Status Non-RoHS Compliant
JANTXV2N5416UA Product Details

JANTXV2N5416UA Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 30 @ 50mA 10V DC current gain.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 2V @ 5mA, 50mA.Collector Emitter Breakdown occurs at 300VV - Maximum voltage.

JANTXV2N5416UA Features


the DC current gain for this device is 30 @ 50mA 10V
the vce saturation(Max) is 2V @ 5mA, 50mA

JANTXV2N5416UA Applications


There are a lot of Microsemi Corporation JANTXV2N5416UA applications of single BJT transistors.

  • Interface
  • Driver
  • Inverter
  • Muting

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