JAN2N1893S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website
SOT-23
JAN2N1893S Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
22 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-205AD, TO-39-3 Metal Can
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-65°C~200°C TJ
Packaging
Bulk
Published
2002
Series
Military, MIL-PRF-19500/182
JESD-609 Code
e0
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
HTS Code
8541.21.00.95
Max Power Dissipation
800mW
Terminal Position
BOTTOM
Terminal Form
WIRE
Pin Count
3
Reference Standard
MIL-19500/182F
Qualification Status
Qualified
Number of Elements
1
Configuration
SINGLE
Case Connection
COLLECTOR
Power - Max
3W
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
80V
Max Collector Current
500mA
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 150mA 10V
Current - Collector Cutoff (Max)
10μA ICBO
JEDEC-95 Code
TO-5
Vce Saturation (Max) @ Ib, Ic
5V @ 15mA, 150mA
Current - Collector (Ic) (Max)
500mA
Collector Base Voltage (VCBO)
120V
Radiation Hardening
No
RoHS Status
Non-RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
100
$28.91640
$2891.64
JAN2N1893S Product Details
JAN2N1893S Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 40 @ 150mA 10V DC current gain.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 5V @ 15mA, 150mA.A maximum collector current of 500mA volts is possible.
JAN2N1893S Features
the DC current gain for this device is 40 @ 150mA 10V the vce saturation(Max) is 5V @ 15mA, 150mA
JAN2N1893S Applications
There are a lot of Microsemi Corporation JAN2N1893S applications of single BJT transistors.