JAN2N2432 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website
SOT-23
JAN2N2432 Datasheet
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Specifications
Name
Value
Type
Parameter
Lifecycle Status
IN PRODUCTION (Last Updated: 2 days ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-206AA, TO-18-3 Metal Can
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-65°C~175°C TJ
Packaging
Bulk
Published
2007
Series
Military, MIL-PRF-19500/313
JESD-609 Code
e0
Pbfree Code
no
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
Max Power Dissipation
300mW
Terminal Position
BOTTOM
Terminal Form
WIRE
Pin Count
3
Qualification Status
Qualified
Number of Elements
1
Configuration
SINGLE
Power Dissipation
300mW
Case Connection
COLLECTOR
Power - Max
360mW
Transistor Application
CHOPPER
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
30V
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 1mA 5V
Current - Collector Cutoff (Max)
10nA
Vce Saturation (Max) @ Ib, Ic
150mV @ 500μA, 10mA
Transition Frequency
20MHz
Collector Base Voltage (VCBO)
30V
Emitter Base Voltage (VEBO)
15V
Radiation Hardening
No
RoHS Status
Non-RoHS Compliant
JAN2N2432 Product Details
JAN2N2432 Overview
DC current gain in this device equals 80 @ 1mA 5V, which is the ratio of the base current to the collector current.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 150mV @ 500μA, 10mA.If the emitter base voltage is kept at 15V, a high level of efficiency can be achieved.As you can see, the part has a transition frequency of 20MHz.Maximum collector currents can be below 100mA volts.
JAN2N2432 Features
the DC current gain for this device is 80 @ 1mA 5V the vce saturation(Max) is 150mV @ 500μA, 10mA the emitter base voltage is kept at 15V a transition frequency of 20MHz
JAN2N2432 Applications
There are a lot of Microsemi Corporation JAN2N2432 applications of single BJT transistors.