JAN2N2907A Overview
This device has a DC current gain of 100 @ 150mA 10V, which is the ratio between the collector current and the base current.When VCE saturation is 1.6V @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Product package TO-18 (TO-206AA) comes from the supplier.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.When collector current reaches its maximum, it can reach 600mA volts.
JAN2N2907A Features
the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the emitter base voltage is kept at 5V
the supplier device package of TO-18 (TO-206AA)
JAN2N2907A Applications
There are a lot of Microsemi Corporation JAN2N2907A applications of single BJT transistors.
- Driver
- Muting
- Interface
- Inverter
