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JAN2N3251A

JAN2N3251A

JAN2N3251A

Microsemi Corporation

JAN2N3251A datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website

SOT-23

JAN2N3251A Datasheet

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Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-205AD, TO-39-3 Metal Can
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -65°C~200°C TJ
Packaging Bulk
Published 2007
Series Military, MIL-PRF-19500/323
JESD-609 Code e0
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Max Power Dissipation 360mW
Terminal Position BOTTOM
Terminal Form WIRE
Pin Count 3
Number of Elements 1
Configuration SINGLE
Power Dissipation 360mW
Case Connection COLLECTOR
Transistor Application SWITCHING
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 200mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA 1V
Current - Collector Cutoff (Max) 10μA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 5mA, 50mA
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 5V
Turn On Time-Max (ton) 70ns
Radiation Hardening No
RoHS Status Non-RoHS Compliant
JAN2N3251A Product Details

JAN2N3251A Overview


DC current gain in this device equals 100 @ 10mA 1V, which is the ratio of the base current to the collector current.A VCE saturation (Max) of 500mV @ 5mA, 50mA means Ic has reached its maximum value(saturated).With the emitter base voltage set at 5V, an efficient operation can be achieved.When collector current reaches its maximum, it can reach 200mA volts.

JAN2N3251A Features


the DC current gain for this device is 100 @ 10mA 1V
the vce saturation(Max) is 500mV @ 5mA, 50mA
the emitter base voltage is kept at 5V

JAN2N3251A Applications


There are a lot of Microsemi Corporation JAN2N3251A applications of single BJT transistors.

  • Driver
  • Inverter
  • Muting
  • Interface

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