JAN2N3251A datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website
SOT-23
JAN2N3251A Datasheet
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Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-205AD, TO-39-3 Metal Can
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-65°C~200°C TJ
Packaging
Bulk
Published
2007
Series
Military, MIL-PRF-19500/323
JESD-609 Code
e0
Pbfree Code
no
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
Max Power Dissipation
360mW
Terminal Position
BOTTOM
Terminal Form
WIRE
Pin Count
3
Number of Elements
1
Configuration
SINGLE
Power Dissipation
360mW
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
60V
Max Collector Current
200mA
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 10mA 1V
Current - Collector Cutoff (Max)
10μA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 5mA, 50mA
Collector Base Voltage (VCBO)
60V
Emitter Base Voltage (VEBO)
5V
Turn On Time-Max (ton)
70ns
Radiation Hardening
No
RoHS Status
Non-RoHS Compliant
JAN2N3251A Product Details
JAN2N3251A Overview
DC current gain in this device equals 100 @ 10mA 1V, which is the ratio of the base current to the collector current.A VCE saturation (Max) of 500mV @ 5mA, 50mA means Ic has reached its maximum value(saturated).With the emitter base voltage set at 5V, an efficient operation can be achieved.When collector current reaches its maximum, it can reach 200mA volts.
JAN2N3251A Features
the DC current gain for this device is 100 @ 10mA 1V the vce saturation(Max) is 500mV @ 5mA, 50mA the emitter base voltage is kept at 5V
JAN2N3251A Applications
There are a lot of Microsemi Corporation JAN2N3251A applications of single BJT transistors.