JANTX2N718A datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website
SOT-23
JANTX2N718A Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Lifecycle Status
IN PRODUCTION (Last Updated: 1 month ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-206AA, TO-18-3 Metal Can
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-65°C~200°C TJ
Packaging
Bulk
Series
Military, MIL-PRF-19500/181
JESD-609 Code
e0
Pbfree Code
no
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
Subcategory
Other Transistors
Max Power Dissipation
500mW
Terminal Position
BOTTOM
Terminal Form
WIRE
Pin Count
3
Qualification Status
Qualified
Number of Elements
1
Configuration
SINGLE
Power Dissipation
500mW
Case Connection
COLLECTOR
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
30V
Max Collector Current
500mA
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 150mA 10V
Current - Collector Cutoff (Max)
10μA ICBO
Vce Saturation (Max) @ Ib, Ic
1.5V @ 15mA, 150mA
Collector Base Voltage (VCBO)
75V
Emitter Base Voltage (VEBO)
7V
Radiation Hardening
No
RoHS Status
Non-RoHS Compliant
JANTX2N718A Product Details
JANTX2N718A Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 40 @ 150mA 10V DC current gain.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.5V @ 15mA, 150mA.A high level of efficiency can be achieved if the base voltage of the emitter remains at 7V.During maximum operation, collector current can be as low as 500mA volts.
JANTX2N718A Features
the DC current gain for this device is 40 @ 150mA 10V the vce saturation(Max) is 1.5V @ 15mA, 150mA the emitter base voltage is kept at 7V
JANTX2N718A Applications
There are a lot of Microsemi Corporation JANTX2N718A applications of single BJT transistors.