2N1613 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from STMicroelectronics stock available on our website
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2N1613 Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-205AD, TO-39-3 Metal Can
Transistor Element Material
SILICON
Operating Temperature
-65°C~200°C TJ
Packaging
Tube
JESD-609 Code
e0
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
Tin/Lead (Sn/Pb)
HTS Code
8541.21.00.95
Subcategory
Other Transistors
Voltage - Rated DC
75V
Max Power Dissipation
800mW
Terminal Position
BOTTOM
Terminal Form
WIRE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
not_compliant
Current Rating
500mA
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
2N16
JESD-30 Code
O-MBCY-W3
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Gain Bandwidth Product
80MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
1.5V
Max Collector Current
500mA
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 150mA 10V
Current - Collector Cutoff (Max)
10nA ICBO
Vce Saturation (Max) @ Ib, Ic
1.5V @ 15mA, 150mA
Collector Emitter Breakdown Voltage
50V
Transition Frequency
60MHz
Collector Base Voltage (VCBO)
75V
Emitter Base Voltage (VEBO)
7V
hFE Min
20
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$2.43000
$2.43
10
$2.19900
$21.99
25
$1.96360
$49.09
100
$1.76720
$176.72
250
$1.57080
$392.7
500
$1.37446
$687.23
2N1613 Product Details
2N1613 Description
The central semiconductor 2N1613 is a silicon NPN epitaxial planar transistor specially designed for small signal general purpose switching applications.
2N1613Applications
switching applications
2N1613Features
2N1613 SILICON NPN TRANSISTOR w w w.
c e n t r a l s e m i .
c o m DESCRIPTION : The CENTRAL SEMICONDUCTOR 2N1613 is a silicon NPN epitaxial planar transisto r designed for small signal general pur pose switching applications.
MARKING: F ULL PART NUMBER TO-39 CASE MAXIMUM RA TINGS: (TA=25°C unless otherwise noted ) SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage VCER Emitt er-Base Voltage VEBO Continuous Colle ctor Current IC Power Dissipation (TC =25°C) PD Power Dissipation PD Ope rating and Storage Junction Temperature TJ, Tstg 75 50 7.