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2N1613

2N1613

2N1613

STMicroelectronics

2N1613 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from STMicroelectronics stock available on our website

SOT-23

2N1613 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-205AD, TO-39-3 Metal Can
Transistor Element Material SILICON
Operating Temperature-65°C~200°C TJ
PackagingTube
JESD-609 Code e0
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin/Lead (Sn/Pb)
HTS Code8541.21.00.95
Subcategory Other Transistors
Voltage - Rated DC 75V
Max Power Dissipation800mW
Terminal Position BOTTOM
Terminal FormWIRE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Current Rating500mA
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number 2N16
JESD-30 Code O-MBCY-W3
Qualification StatusNot Qualified
Number of Elements 1
Element ConfigurationSingle
Gain Bandwidth Product80MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 1.5V
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 150mA 10V
Current - Collector Cutoff (Max) 10nA ICBO
Vce Saturation (Max) @ Ib, Ic 1.5V @ 15mA, 150mA
Collector Emitter Breakdown Voltage50V
Transition Frequency 60MHz
Collector Base Voltage (VCBO) 75V
Emitter Base Voltage (VEBO) 7V
hFE Min 20
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:1841 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$2.43000$2.43
10$2.19900$21.99
25$1.96360$49.09
100$1.76720$176.72
250$1.57080$392.7
500$1.37446$687.23

2N1613 Product Details

2N1613 Description


The central semiconductor 2N1613 is a silicon NPN epitaxial planar transistor specially designed for small signal general purpose switching applications.

2N1613Applications

switching applications

2N1613Features


2N1613 SILICON NPN TRANSISTOR w w w.

c e n t r a l s e m i .

c o m DESCRIPTION : The CENTRAL SEMICONDUCTOR 2N1613 is a silicon NPN epitaxial planar transisto r designed for small signal general pur pose switching applications.

MARKING: F ULL PART NUMBER TO-39 CASE MAXIMUM RA TINGS: (TA=25°C unless otherwise noted ) SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage VCER Emitt er-Base Voltage VEBO Continuous Colle ctor Current IC Power Dissipation (TC =25°C) PD Power Dissipation PD Ope rating and Storage Junction Temperature TJ, Tstg 75 50 7.

0 500 3.

0 0.

8 -65 t o +200 ELECTRIC


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