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2N1613

2N1613

2N1613

STMicroelectronics

2N1613 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from STMicroelectronics stock available on our website

SOT-23

2N1613 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-205AD, TO-39-3 Metal Can
Transistor Element Material SILICON
Operating Temperature -65°C~200°C TJ
Packaging Tube
JESD-609 Code e0
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin/Lead (Sn/Pb)
HTS Code 8541.21.00.95
Subcategory Other Transistors
Voltage - Rated DC 75V
Max Power Dissipation 800mW
Terminal Position BOTTOM
Terminal Form WIRE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Current Rating 500mA
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number 2N16
JESD-30 Code O-MBCY-W3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Gain Bandwidth Product 80MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 1.5V
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 150mA 10V
Current - Collector Cutoff (Max) 10nA ICBO
Vce Saturation (Max) @ Ib, Ic 1.5V @ 15mA, 150mA
Collector Emitter Breakdown Voltage 50V
Transition Frequency 60MHz
Collector Base Voltage (VCBO) 75V
Emitter Base Voltage (VEBO) 7V
hFE Min 20
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $2.43000 $2.43
10 $2.19900 $21.99
25 $1.96360 $49.09
100 $1.76720 $176.72
250 $1.57080 $392.7
500 $1.37446 $687.23
2N1613 Product Details

2N1613 Description


  The central semiconductor 2N1613 is a silicon NPN epitaxial planar transistor specially designed for small signal general purpose switching applications.

 

2N1613 Applications

switching applications

 

2N1613  Features


2N1613 SILICON NPN TRANSISTOR w w w.

c e n t r a l s e m i .

c o m DESCRIPTION : The CENTRAL SEMICONDUCTOR 2N1613 is a silicon NPN epitaxial planar transisto r designed for small signal general pur pose switching applications.

MARKING: F ULL PART NUMBER TO-39 CASE MAXIMUM RA TINGS: (TA=25°C unless otherwise noted ) SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage VCER Emitt er-Base Voltage VEBO Continuous Colle ctor Current IC Power Dissipation (TC =25°C) PD Power Dissipation PD Ope rating and Storage Junction Temperature TJ, Tstg 75 50 7.

0 500 3.

0 0.

8 -65 t o +200 ELECTRIC 


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