JAN2N3762 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website
SOT-23
JAN2N3762 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
22 Weeks
Lifecycle Status
IN PRODUCTION (Last Updated: 3 weeks ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-205AD, TO-39-3 Metal Can
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~200°C TJ
Packaging
Bulk
Published
2002
Series
Military, MIL-PRF-19500/396
JESD-609 Code
e0
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
Max Power Dissipation
1W
Terminal Position
BOTTOM
Terminal Form
WIRE
Pin Count
2
Qualification Status
Qualified
Number of Elements
1
Configuration
SINGLE
Power Dissipation
1W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
40V
Max Collector Current
1.5A
DC Current Gain (hFE) (Min) @ Ic, Vce
30 @ 1A 1.5V
Current - Collector Cutoff (Max)
10μA ICBO
Vce Saturation (Max) @ Ib, Ic
900mV @ 100mA, 1A
Collector Base Voltage (VCBO)
40V
Emitter Base Voltage (VEBO)
5V
Radiation Hardening
No
RoHS Status
Non-RoHS Compliant
JAN2N3762 Product Details
JAN2N3762 Overview
This device has a DC current gain of 30 @ 1A 1.5V, which is the ratio between the base current and the collector current.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 900mV @ 100mA, 1A.The emitter base voltage can be kept at 5V for high efficiency.A maximum collector current of 1.5A volts is possible.
JAN2N3762 Features
the DC current gain for this device is 30 @ 1A 1.5V the vce saturation(Max) is 900mV @ 100mA, 1A the emitter base voltage is kept at 5V
JAN2N3762 Applications
There are a lot of Microsemi Corporation JAN2N3762 applications of single BJT transistors.