MJD2955 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
MJD2955 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Lifecycle Status
OBSOLETE (Last Updated: 8 hours ago)
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2006
JESD-609 Code
e0
Pbfree Code
no
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
Subcategory
Other Transistors
Voltage - Rated DC
-60V
Max Power Dissipation
1.75W
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
240
Reach Compliance Code
not_compliant
Current Rating
-10A
Frequency
2MHz
[email protected] Reflow Temperature-Max (s)
30
Base Part Number
MJD2955
Pin Count
3
JESD-30 Code
R-PSSO-G2
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Power Dissipation
1.75W
Case Connection
COLLECTOR
Transistor Application
AMPLIFIER
Gain Bandwidth Product
2MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
60V
Max Collector Current
10A
DC Current Gain (hFE) (Min) @ Ic, Vce
20 @ 4A 4V
Current - Collector Cutoff (Max)
50μA
Vce Saturation (Max) @ Ib, Ic
8V @ 3.3A, 10A
Collector Emitter Breakdown Voltage
60V
Transition Frequency
2MHz
Collector Emitter Saturation Voltage
1.1V
Collector Base Voltage (VCBO)
70V
Emitter Base Voltage (VEBO)
5V
hFE Min
20
RoHS Status
Non-RoHS Compliant
Lead Free
Contains Lead
MJD2955 Product Details
MJD2955 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 20 @ 4A 4V.A collector emitter saturation voltage of 1.1V ensures maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-10A).In the part, the transition frequency is 2MHz.A maximum collector current of 10A volts is possible.
MJD2955 Features
the DC current gain for this device is 20 @ 4A 4V a collector emitter saturation voltage of 1.1V the vce saturation(Max) is 8V @ 3.3A, 10A the emitter base voltage is kept at 5V the current rating of this device is -10A a transition frequency of 2MHz
MJD2955 Applications
There are a lot of ON Semiconductor MJD2955 applications of single BJT transistors.