BC560CTAR datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
BC560CTAR Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Operating Temperature
150°C TJ
Packaging
Tape & Box (TB)
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Base Part Number
BC560
Power - Max
500mW
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
420 @ 2mA 5V
Current - Collector Cutoff (Max)
15nA ICBO
Vce Saturation (Max) @ Ib, Ic
650mV @ 5mA, 100mA
Voltage - Collector Emitter Breakdown (Max)
45V
Current - Collector (Ic) (Max)
100mA
Frequency - Transition
150MHz
BC560CTAR Product Details
BC560CTAR Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 420 @ 2mA 5V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 650mV @ 5mA, 100mA.The device exhibits a collector-emitter breakdown at 45V.
BC560CTAR Features
the DC current gain for this device is 420 @ 2mA 5V the vce saturation(Max) is 650mV @ 5mA, 100mA
BC560CTAR Applications
There are a lot of ON Semiconductor BC560CTAR applications of single BJT transistors.