JAN2N5153 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website
SOT-23
JAN2N5153 Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Lifecycle Status
IN PRODUCTION (Last Updated: 1 month ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-205AD, TO-39-3 Metal Can
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-65°C~200°C TJ
Packaging
Bulk
Series
Military, MIL-PRF-19500/545
JESD-609 Code
e0
Pbfree Code
no
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
Subcategory
Other Transistors
Max Power Dissipation
1W
Terminal Position
BOTTOM
Terminal Form
WIRE
Pin Count
4
Qualification Status
Qualified
Number of Elements
1
Configuration
SINGLE
Power Dissipation
1W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
80V
Max Collector Current
2A
DC Current Gain (hFE) (Min) @ Ic, Vce
70 @ 2.5A 5V
Current - Collector Cutoff (Max)
50μA
Vce Saturation (Max) @ Ib, Ic
1.5V @ 500mA, 5A
Transition Frequency
70MHz
Collector Base Voltage (VCBO)
100V
Emitter Base Voltage (VEBO)
5.5V
Turn On Time-Max (ton)
500ns
Radiation Hardening
No
RoHS Status
Non-RoHS Compliant
JAN2N5153 Product Details
JAN2N5153 Overview
This device has a DC current gain of 70 @ 2.5A 5V, which is the ratio between the collector current and the base current.A VCE saturation (Max) of 1.5V @ 500mA, 5A means Ic has reached its maximum value(saturated).The emitter base voltage can be kept at 5.5V for high efficiency.As you can see, the part has a transition frequency of 70MHz.During maximum operation, collector current can be as low as 2A volts.
JAN2N5153 Features
the DC current gain for this device is 70 @ 2.5A 5V the vce saturation(Max) is 1.5V @ 500mA, 5A the emitter base voltage is kept at 5.5V a transition frequency of 70MHz
JAN2N5153 Applications
There are a lot of Microsemi Corporation JAN2N5153 applications of single BJT transistors.