JANTXV2N5416S Overview

In this device, the DC current gain is 30 @ 50mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 2V @ 5mA, 50mA.The emitter base voltage can be kept at 6V for high efficiency.When collector current reaches its maximum, it can reach 1A volts.

JANTXV2N5416S Features

the DC current gain for this device is 30 @ 50mA 10V
the vce saturation(Max) is 2V @ 5mA, 50mA
the emitter base voltage is kept at 6V

JANTXV2N5416S Applications

There are a lot of Microsemi Corporation JANTXV2N5416S applications of single BJT transistors.

• Inverter
• Driver
• Muting
• Interface