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JAN2N5415

JAN2N5415

JAN2N5415

Microsemi Corporation

JAN2N5415 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website

SOT-23

JAN2N5415 Datasheet

non-compliant

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Specifications
Name Value
Type Parameter
Factory Lead Time 22 Weeks
Lifecycle Status IN PRODUCTION (Last Updated: 1 month ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-205AA, TO-5-3 Metal Can
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -65°C~200°C TJ
Packaging Bulk
Published 2007
Series Military, MIL-PRF-19500/485
JESD-609 Code e0
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Max Power Dissipation 750mW
Terminal Position BOTTOM
Terminal Form WIRE
Reference Standard MILITARY STANDARD (USA)
JESD-30 Code O-MBCY-W4
Qualification Status Qualified
Number of Elements 1
Configuration SINGLE
Power Dissipation 750mW
Case Connection COLLECTOR
Transistor Application SWITCHING
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 200V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 50mA 10V
Current - Collector Cutoff (Max) 1mA
Vce Saturation (Max) @ Ib, Ic 2V @ 5mA, 50mA
Collector Base Voltage (VCBO) 200V
Emitter Base Voltage (VEBO) 6V
Radiation Hardening No
RoHS Status Non-RoHS Compliant
JAN2N5415 Product Details

JAN2N5415 Overview


This device has a DC current gain of 30 @ 50mA 10V, which is the ratio between the collector current and the base current.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 2V @ 5mA, 50mA.With the emitter base voltage set at 6V, an efficient operation can be achieved.In extreme cases, the collector current can be as low as 1A volts.

JAN2N5415 Features


the DC current gain for this device is 30 @ 50mA 10V
the vce saturation(Max) is 2V @ 5mA, 50mA
the emitter base voltage is kept at 6V

JAN2N5415 Applications


There are a lot of Microsemi Corporation JAN2N5415 applications of single BJT transistors.

  • Muting
  • Inverter
  • Driver
  • Interface

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