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JAN2N5416UA

JAN2N5416UA

JAN2N5416UA

Microsemi Corporation

PNP LOW POWER SILICON TRANSISTOR

SOT-23

JAN2N5416UA Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 22 Weeks
Lifecycle Status IN PRODUCTION (Last Updated: 4 weeks ago)
Mount Surface Mount
Mounting Type Through Hole
Package / Case TO-205AA, TO-5-3 Metal Can
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature -65°C~200°C TJ
Packaging Bulk
Published 2007
Series Military, MIL-PRF-19500/485
JESD-609 Code e0
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Position DUAL
Qualification Status Qualified
Number of Elements 1
Configuration SINGLE
Case Connection COLLECTOR
Power - Max 750mW
Transistor Application SWITCHING
Polarity/Channel Type PNP
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 50mA 10V
Current - Collector Cutoff (Max) 1mA
Vce Saturation (Max) @ Ib, Ic 2V @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max) 300V
Current - Collector (Ic) (Max) 1A
Turn Off Time-Max (toff) 10000ns
Turn On Time-Max (ton) 1000ns
Radiation Hardening No
RoHS Status Non-RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $189.60000 $189.6
500 $187.704 $93852
1000 $185.808 $185808
1500 $183.912 $275868
2000 $182.016 $364032
2500 $180.12 $450300

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