JAN2N6249 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website
SOT-23
JAN2N6249 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Lifecycle Status
OBSOLETE (Last Updated: 4 weeks ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-65°C~200°C TJ
Packaging
Bulk
Series
Military, MIL-PRF-19500/510
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
HTS Code
8541.29.00.95
Max Power Dissipation
6W
Terminal Position
BOTTOM
Terminal Form
PIN/PEG
Pin Count
2
Reference Standard
MIL
JESD-30 Code
O-MBFM-P2
Number of Elements
1
Configuration
SINGLE
Case Connection
COLLECTOR
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
200V
Max Collector Current
10A
DC Current Gain (hFE) (Min) @ Ic, Vce
10 @ 10A 3V
Current - Collector Cutoff (Max)
1mA
JEDEC-95 Code
TO-204
Vce Saturation (Max) @ Ib, Ic
1.5V @ 1A, 10A
Current - Collector (Ic) (Max)
10A
Collector Base Voltage (VCBO)
300V
Radiation Hardening
No
RoHS Status
Non-RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$191.10000
$191.1
500
$189.189
$94594.5
1000
$187.278
$187278
1500
$185.367
$278050.5
2000
$183.456
$366912
2500
$181.545
$453862.5
JAN2N6249 Product Details
JAN2N6249 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 10 @ 10A 3V DC current gain.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.5V @ 1A, 10A.Collector current can be as low as 10A volts at its maximum.
JAN2N6249 Features
the DC current gain for this device is 10 @ 10A 3V the vce saturation(Max) is 1.5V @ 1A, 10A
JAN2N6249 Applications
There are a lot of Microsemi Corporation JAN2N6249 applications of single BJT transistors.