JAN2N6284 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 1250 @ 10A 3V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 3V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 3V @ 200mA, 20A.Keeping the emitter base voltage at 7V allows for a high level of efficiency.4MHz is present in the transition frequency.
JAN2N6284 Features
the DC current gain for this device is 1250 @ 10A 3V
a collector emitter saturation voltage of 3V
the vce saturation(Max) is 3V @ 200mA, 20A
the emitter base voltage is kept at 7V
a transition frequency of 4MHz
JAN2N6284 Applications
There are a lot of Microsemi Corporation JAN2N6284 applications of single BJT transistors.
- Driver
- Muting
- Inverter
- Interface
