JAN2N6299 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 750 @ 4A 3V.The collector emitter saturation voltage is 2V, which allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.With the emitter base voltage set at 5V, an efficient operation can be achieved.A transition frequency of 4MHz is present in the part.
JAN2N6299 Features
the DC current gain for this device is 750 @ 4A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2V @ 16mA, 4A
the emitter base voltage is kept at 5V
a transition frequency of 4MHz
JAN2N6299 Applications
There are a lot of Microsemi Corporation JAN2N6299 applications of single BJT transistors.
- Inverter
- Driver
- Muting
- Interface
