JAN2N918 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website
SOT-23
JAN2N918 Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
23 Weeks
Lifecycle Status
IN PRODUCTION (Last Updated: 1 month ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-72-3 Metal Can
Transistor Element Material
SILICON
Operating Temperature
-65°C~200°C TJ
Packaging
Bulk
Published
2007
Series
Military, MIL-PRF-19500/301
JESD-609 Code
e0
Pbfree Code
no
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
HTS Code
8541.21.00.95
Max Power Dissipation
200mW
Terminal Position
BOTTOM
Terminal Form
WIRE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
4
Reference Standard
MIL-19500/301H
JESD-30 Code
O-MBCY-W4
Qualification Status
Qualified
Number of Elements
1
Configuration
SINGLE
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
15V
Max Collector Current
50mA
DC Current Gain (hFE) (Min) @ Ic, Vce
20 @ 3mA 1V
Current - Collector Cutoff (Max)
1μA ICBO
Vce Saturation (Max) @ Ib, Ic
400mV @ 1mA, 10mA
Current - Collector (Ic) (Max)
50mA
Collector Base Voltage (VCBO)
30V
Highest Frequency Band
ULTRA HIGH FREQUENCY B
Collector-Base Capacitance-Max
3pF
RoHS Status
Non-RoHS Compliant
JAN2N918 Product Details
JAN2N918 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 20 @ 3mA 1V.A VCE saturation (Max) of 400mV @ 1mA, 10mA means Ic has reached its maximum value(saturated).A maximum collector current of 50mA volts can be achieved.
JAN2N918 Features
the DC current gain for this device is 20 @ 3mA 1V the vce saturation(Max) is 400mV @ 1mA, 10mA
JAN2N918 Applications
There are a lot of Microsemi Corporation JAN2N918 applications of single BJT transistors.