MPSA05G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
MPSA05G Datasheet
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Specifications
Name
Value
Type
Parameter
Lifecycle Status
LAST SHIPMENTS (Last Updated: 1 day ago)
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Surface Mount
NO
Number of Pins
3
Weight
4.535924g
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Bulk
Published
2007
JESD-609 Code
e1
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory
Other Transistors
Voltage - Rated DC
60V
Max Power Dissipation
625mW
Terminal Position
BOTTOM
Peak Reflow Temperature (Cel)
260
Current Rating
500mA
Frequency
100MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
MPSA05
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
625mW
Transistor Application
AMPLIFIER
Gain Bandwidth Product
100MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
60V
Max Collector Current
500mA
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 100mA 1V
Current - Collector Cutoff (Max)
100nA
Vce Saturation (Max) @ Ib, Ic
250mV @ 10mA, 100mA
Collector Emitter Breakdown Voltage
60V
Transition Frequency
100MHz
Collector Emitter Saturation Voltage
250mV
Collector Base Voltage (VCBO)
60V
Emitter Base Voltage (VEBO)
4V
hFE Min
100
Height
5.33mm
Length
5.2mm
Width
4.19mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
RoHS Compliant
Lead Free
Lead Free
MPSA05G Product Details
MPSA05G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 100mA 1V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 250mV.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 250mV @ 10mA, 100mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 4V.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 500mA.There is a transition frequency of 100MHz in the part.A maximum collector current of 500mA volts can be achieved.
MPSA05G Features
the DC current gain for this device is 100 @ 100mA 1V a collector emitter saturation voltage of 250mV the vce saturation(Max) is 250mV @ 10mA, 100mA the emitter base voltage is kept at 4V the current rating of this device is 500mA a transition frequency of 100MHz
MPSA05G Applications
There are a lot of ON Semiconductor MPSA05G applications of single BJT transistors.