MMBTA13LT1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
MMBTA13LT1 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Lifecycle Status
LAST SHIPMENTS (Last Updated: 1 week ago)
Package / Case
SOT-23-3
Number of Pins
3
Packaging
Cut Tape (CT)
Published
2006
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Voltage - Rated DC
30V
Max Power Dissipation
225mW
Current Rating
300mA
Number of Elements
1
Polarity
NPN
Element Configuration
Single
Power Dissipation
225mW
Collector Emitter Voltage (VCEO)
30V
Max Collector Current
300mA
Collector Emitter Breakdown Voltage
30V
Transition Frequency
125MHz
Collector Emitter Saturation Voltage
1.5V
Collector Base Voltage (VCBO)
30V
Emitter Base Voltage (VEBO)
10V
Continuous Collector Current
300mA
RoHS Status
Non-RoHS Compliant
Lead Free
Contains Lead
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.080756
$0.080756
500
$0.059379
$29.6895
1000
$0.049483
$49.483
2000
$0.045397
$90.794
5000
$0.042427
$212.135
10000
$0.039467
$394.67
15000
$0.038169
$572.535
50000
$0.037532
$1876.6
MMBTA13LT1 Product Details
MMBTA13LT1 Overview
A collector emitter saturation voltage of 1.5V ensures maximum design flexibility.Maintaining the continuous collector voltage at 300mA is essential for high efficiency.The emitter base voltage can be kept at 10V for high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 300mA current rating.The part has a transition frequency of 125MHz.A maximum collector current of 300mA volts is possible.
MMBTA13LT1 Features
a collector emitter saturation voltage of 1.5V the emitter base voltage is kept at 10V the current rating of this device is 300mA a transition frequency of 125MHz
MMBTA13LT1 Applications
There are a lot of ON Semiconductor MMBTA13LT1 applications of single BJT transistors.