JANS2N3439 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website
SOT-23
JANS2N3439 Datasheet
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In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Lifecycle Status
IN PRODUCTION (Last Updated: 1 month ago)
Contact Plating
Lead, Tin
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-205AD, TO-39-3 Metal Can
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-65°C~200°C TJ
Packaging
Bulk
Published
2007
Series
Military, MIL-PRF-19500/368
JESD-609 Code
e0
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
HTS Code
8541.21.00.95
Max Power Dissipation
800mW
Terminal Position
BOTTOM
Terminal Form
WIRE
Pin Count
3
Qualification Status
Qualified
Number of Elements
1
Configuration
SINGLE
Case Connection
COLLECTOR
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
350V
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 20mA 10V
Current - Collector Cutoff (Max)
2μA
JEDEC-95 Code
TO-5
Vce Saturation (Max) @ Ib, Ic
500mV @ 4mA, 50mA
Current - Collector (Ic) (Max)
1A
Collector Base Voltage (VCBO)
450V
Turn Off Time-Max (toff)
10000ns
Turn On Time-Max (ton)
1000ns
Radiation Hardening
No
RoHS Status
Non-RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
100
$141.72200
$14172.2
JANS2N3439 Product Details
JANS2N3439 Overview
This device has a DC current gain of 40 @ 20mA 10V, which is the ratio between the base current and the collector current.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 4mA, 50mA.When collector current reaches its maximum, it can reach 1A volts.
JANS2N3439 Features
the DC current gain for this device is 40 @ 20mA 10V the vce saturation(Max) is 500mV @ 4mA, 50mA
JANS2N3439 Applications
There are a lot of Microsemi Corporation JANS2N3439 applications of single BJT transistors.