JANS2N3439UA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website
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JANS2N3439UA Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
20 Weeks
Lifecycle Status
IN PRODUCTION (Last Updated: 1 month ago)
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
4-SMD, No Lead
Number of Pins
4
Transistor Element Material
SILICON
Operating Temperature
-65°C~200°C TJ
Packaging
Bulk
Published
2007
Series
Military, MIL-PRF-19500/368
JESD-609 Code
e0
Pbfree Code
no
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
Subcategory
Other Transistors
Max Power Dissipation
800mW
Terminal Position
DUAL
Pin Count
4
Reference Standard
MIL-19500/368F
Qualification Status
Qualified
Number of Elements
1
Configuration
SINGLE
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
350V
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 20mA 10V
Current - Collector Cutoff (Max)
2μA
Vce Saturation (Max) @ Ib, Ic
500mV @ 4mA, 50mA
Current - Collector (Ic) (Max)
1A
Collector Base Voltage (VCBO)
450V
Turn Off Time-Max (toff)
10000ns
Turn On Time-Max (ton)
1000ns
Radiation Hardening
No
RoHS Status
Non-RoHS Compliant
JANS2N3439UA Product Details
JANS2N3439UA Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 40 @ 20mA 10V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 4mA, 50mA.When collector current reaches its maximum, it can reach 1A volts.
JANS2N3439UA Features
the DC current gain for this device is 40 @ 20mA 10V the vce saturation(Max) is 500mV @ 4mA, 50mA
JANS2N3439UA Applications
There are a lot of Microsemi Corporation JANS2N3439UA applications of single BJT transistors.