JANS2N3637 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website
SOT-23
JANS2N3637 Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
33 Weeks
Lifecycle Status
IN PRODUCTION (Last Updated: 3 weeks ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-205AD, TO-39-3 Metal Can
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-65°C~200°C TJ
Packaging
Bulk
Published
2007
Series
Military, MIL-PRF-19500/357
JESD-609 Code
e0
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
HTS Code
8541.29.00.95
Subcategory
Other Transistors
Max Power Dissipation
1W
Terminal Position
BOTTOM
Terminal Form
WIRE
Pin Count
2
Qualification Status
Qualified
Number of Elements
1
Configuration
SINGLE
Power - Max
1W
Transistor Application
AMPLIFIER
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
600mV
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 50mA 10V
Current - Collector Cutoff (Max)
10μA
Vce Saturation (Max) @ Ib, Ic
600mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage
175V
Transition Frequency
200MHz
Collector Base Voltage (VCBO)
175V
Turn Off Time-Max (toff)
650ns
Turn On Time-Max (ton)
200ns
Radiation Hardening
No
RoHS Status
Non-RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$78.64000
$78.64
10
$73.87200
$738.72
25
$70.53600
$1763.4
100
$66.72330
$6672.33
JANS2N3637 Product Details
JANS2N3637 Overview
In this device, the DC current gain is 100 @ 50mA 10V, which is the ratio between the base current and the collector current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).As a result, the part has a transition frequency of 200MHz.In extreme cases, the collector current can be as low as 1A volts.
JANS2N3637 Features
the DC current gain for this device is 100 @ 50mA 10V the vce saturation(Max) is 600mV @ 5mA, 50mA a transition frequency of 200MHz
JANS2N3637 Applications
There are a lot of Microsemi Corporation JANS2N3637 applications of single BJT transistors.