NSVBC818-40LT1G Overview

As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 250 @ 100mA 1V.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 700mV @ 50mA, 500mA.The base voltage of the emitter can be kept at 5V to achieve high efficiency.Single BJT transistor is possible to have a collector current as low as 500mA volts at Single BJT transistors maximum.

NSVBC818-40LT1G Features

the DC current gain for this device is 250 @ 100mA 1V
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V

NSVBC818-40LT1G Applications

There are a lot of ON Semiconductor NSVBC818-40LT1G applications of single BJT transistors.

• Driver
• Interface
• Inverter
• Muting