2DD1664P-13 Overview

This device has a DC current gain of 82 @ 100mA 3V, which is the ratio between the collector current and the base current.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 400mV @ 50mA, 500mA.An emitter's base voltage can be kept at 5V to gain high efficiency.Single BJT transistor contains a transSingle BJT transistorion frequency of 280MHz.As a result, it can handle voltages as low as 32V volts.During maximum operation, collector current can be as low as 1A volts.

2DD1664P-13 Features

the DC current gain for this device is 82 @ 100mA 3V
the vce saturation(Max) is 400mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 280MHz

2DD1664P-13 Applications

There are a lot of Diodes Incorporated 2DD1664P-13 applications of single BJT transistors.

• Interface
• Driver
• Inverter
• Muting