TIP105TU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
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TIP105TU Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
2 Weeks
Lifecycle Status
ACTIVE (Last Updated: 2 days ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Weight
1.214g
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tube
Published
2008
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
Other Transistors
Voltage - Rated DC
-60V
Max Power Dissipation
2W
Current Rating
-8A
Number of Elements
1
Polarity
PNP
Element Configuration
Single
Power Dissipation
80W
Power - Max
2W
Transistor Type
PNP - Darlington
Collector Emitter Voltage (VCEO)
60V
Max Collector Current
8A
DC Current Gain (hFE) (Min) @ Ic, Vce
1000 @ 3A 4V
Current - Collector Cutoff (Max)
50μA
JEDEC-95 Code
TO-220AB
Vce Saturation (Max) @ Ib, Ic
2.5V @ 80mA, 8A
Collector Emitter Breakdown Voltage
60V
Collector Emitter Saturation Voltage
2V
Collector Base Voltage (VCBO)
-60V
Emitter Base Voltage (VEBO)
-5V
hFE Min
1000
Height
16.51mm
Length
10.67mm
Width
4.83mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.260055
$0.260055
10
$0.245335
$2.45335
100
$0.231448
$23.1448
500
$0.218347
$109.1735
1000
$0.205987
$205.987
TIP105TU Product Details
TIP105TU Overview
This device has a DC current gain of 1000 @ 3A 4V, which is the ratio between the collector current and the base current.The collector emitter saturation voltage is 2V, which allows for maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 2.5V @ 80mA, 8A.If the emitter base voltage is kept at -5V, a high level of efficiency can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -8A for this device.When collector current reaches its maximum, it can reach 8A volts.
TIP105TU Features
the DC current gain for this device is 1000 @ 3A 4V a collector emitter saturation voltage of 2V the vce saturation(Max) is 2.5V @ 80mA, 8A the emitter base voltage is kept at -5V the current rating of this device is -8A
TIP105TU Applications
There are a lot of ON Semiconductor TIP105TU applications of single BJT transistors.