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JANS2N5004

  • JANS2N5004
  • JANS2N5004

JANS2N5004

JANS2N5004

Microsemi Corporation

JANS2N5004 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website

SOT-23

JANS2N5004 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Stud
Mounting Type Stud Mount
Package / Case TO-210AA, TO-59-4, Stud
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -65°C~200°C TJ
Packaging Bulk
Published 2007
Series Military, MIL-PRF-19500/534
JESD-609 Code e0
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
HTS Code 8541.29.00.95
Max Power Dissipation 2W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Pin Count 3
Reference Standard MIL
Qualification Status Qualified
Number of Elements 1
Configuration SINGLE
Case Connection ISOLATED
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 80V
Max Collector Current 10A
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 2.5A 5V
Current - Collector Cutoff (Max) 50μA
Vce Saturation (Max) @ Ib, Ic 1.5V @ 500mA, 5A
Current - Collector (Ic) (Max) 5A
Collector Base Voltage (VCBO) 100V
Radiation Hardening No
RoHS Status Non-RoHS Compliant
JANS2N5004 Product Details

JANS2N5004 Overview


DC current gain in this device equals 70 @ 2.5A 5V, which is the ratio of the base current to the collector current.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.When collector current reaches its maximum, it can reach 10A volts.

JANS2N5004 Features


the DC current gain for this device is 70 @ 2.5A 5V
the vce saturation(Max) is 1.5V @ 500mA, 5A

JANS2N5004 Applications


There are a lot of Microsemi Corporation JANS2N5004 applications of single BJT transistors.

  • Muting
  • Inverter
  • Driver
  • Interface

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