JANTXV2N6250 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website
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JANTXV2N6250 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
20 Weeks
Lifecycle Status
IN PRODUCTION (Last Updated: 1 month ago)
Contact Plating
Lead, Tin
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-3
Transistor Element Material
SILICON
Operating Temperature
-65°C~200°C TJ
Packaging
Bulk
Published
2007
Series
Military, MIL-PRF-19500/510
JESD-609 Code
e0
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
Subcategory
Other Transistors
Max Power Dissipation
6W
Terminal Position
BOTTOM
Terminal Form
PIN/PEG
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
2
JESD-30 Code
O-MBFM-P2
Qualification Status
Qualified
Number of Elements
1
Configuration
SINGLE
Power Dissipation
6W
Case Connection
COLLECTOR
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
275V
Max Collector Current
10A
DC Current Gain (hFE) (Min) @ Ic, Vce
8 @ 10A 3V
Current - Collector Cutoff (Max)
1mA
JEDEC-95 Code
TO-204AA
Vce Saturation (Max) @ Ib, Ic
1.5V @ 1.25A, 10A
Transition Frequency
2.5MHz
Collector Base Voltage (VCBO)
375V
Emitter Base Voltage (VEBO)
6V
RoHS Status
Non-RoHS Compliant
JANTXV2N6250 Product Details
JANTXV2N6250 Overview
DC current gain in this device equals 8 @ 10A 3V, which is the ratio of the base current to the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.5V @ 1.25A, 10A.Emitter base voltages of 6V can achieve high levels of efficiency.There is a transition frequency of 2.5MHz in the part.Maximum collector currents can be below 10A volts.
JANTXV2N6250 Features
the DC current gain for this device is 8 @ 10A 3V the vce saturation(Max) is 1.5V @ 1.25A, 10A the emitter base voltage is kept at 6V a transition frequency of 2.5MHz
JANTXV2N6250 Applications
There are a lot of Microsemi Corporation JANTXV2N6250 applications of single BJT transistors.