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JANTXV2N6250

JANTXV2N6250

JANTXV2N6250

Microsemi Corporation

JANTXV2N6250 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website

SOT-23

JANTXV2N6250 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 20 Weeks
Lifecycle Status IN PRODUCTION (Last Updated: 1 month ago)
Contact Plating Lead, Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3
Transistor Element Material SILICON
Operating Temperature -65°C~200°C TJ
Packaging Bulk
Published 2007
Series Military, MIL-PRF-19500/510
JESD-609 Code e0
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Subcategory Other Transistors
Max Power Dissipation 6W
Terminal Position BOTTOM
Terminal Form PIN/PEG
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 2
JESD-30 Code O-MBFM-P2
Qualification Status Qualified
Number of Elements 1
Configuration SINGLE
Power Dissipation 6W
Case Connection COLLECTOR
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 275V
Max Collector Current 10A
DC Current Gain (hFE) (Min) @ Ic, Vce 8 @ 10A 3V
Current - Collector Cutoff (Max) 1mA
JEDEC-95 Code TO-204AA
Vce Saturation (Max) @ Ib, Ic 1.5V @ 1.25A, 10A
Transition Frequency 2.5MHz
Collector Base Voltage (VCBO) 375V
Emitter Base Voltage (VEBO) 6V
RoHS Status Non-RoHS Compliant
JANTXV2N6250 Product Details

JANTXV2N6250 Overview


DC current gain in this device equals 8 @ 10A 3V, which is the ratio of the base current to the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.5V @ 1.25A, 10A.Emitter base voltages of 6V can achieve high levels of efficiency.There is a transition frequency of 2.5MHz in the part.Maximum collector currents can be below 10A volts.

JANTXV2N6250 Features


the DC current gain for this device is 8 @ 10A 3V
the vce saturation(Max) is 1.5V @ 1.25A, 10A
the emitter base voltage is kept at 6V
a transition frequency of 2.5MHz

JANTXV2N6250 Applications


There are a lot of Microsemi Corporation JANTXV2N6250 applications of single BJT transistors.

  • Interface
  • Muting
  • Driver
  • Inverter

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