JANTX2N5157 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website
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JANTX2N5157 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
20 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-204AA, TO-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-65°C~200°C TJ
Packaging
Bulk
Published
2001
Series
Military, MIL-PRF-19500/371
JESD-609 Code
e0
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
Terminal Finish
Tin/Lead (Sn/Pb)
Max Power Dissipation
5W
Terminal Position
BOTTOM
Terminal Form
PIN/PEG
Pin Count
2
JESD-30 Code
O-MBFM-P2
Qualification Status
Qualified
Number of Elements
1
Configuration
SINGLE
Power Dissipation
5W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
500V
Max Collector Current
3.5A
DC Current Gain (hFE) (Min) @ Ic, Vce
30 @ 1A 5V
Current - Collector Cutoff (Max)
250μA
Vce Saturation (Max) @ Ib, Ic
2.5V @ 700mA, 3.5A
Collector Base Voltage (VCBO)
700V
Emitter Base Voltage (VEBO)
6V
Radiation Hardening
No
RoHS Status
Non-RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
100
$65.52000
$6552
JANTX2N5157 Product Details
JANTX2N5157 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 30 @ 1A 5V.When VCE saturation is 2.5V @ 700mA, 3.5A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.Single BJT transistor is possible to have a collector current as low as 3.5A volts at Single BJT transistors maximum.
JANTX2N5157 Features
the DC current gain for this device is 30 @ 1A 5V the vce saturation(Max) is 2.5V @ 700mA, 3.5A the emitter base voltage is kept at 6V
JANTX2N5157 Applications
There are a lot of Microsemi Corporation JANTX2N5157 applications of single BJT transistors.