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JANTX2N5682

JANTX2N5682

JANTX2N5682

Microsemi Corporation

JANTX2N5682 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website

SOT-23

JANTX2N5682 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 20 Weeks
Lifecycle Status IN PRODUCTION (Last Updated: 1 month ago)
Contact Plating Lead, Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-205AD, TO-39-3 Metal Can
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -65°C~200°C TJ
Packaging Bulk
Published 2002
Series Military, MIL-PRF-19500/583
JESD-609 Code e0
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Subcategory Other Transistors
Max Power Dissipation 1W
Terminal Position BOTTOM
Terminal Form WIRE
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Qualification Status Qualified
Number of Elements 1
Configuration SINGLE
Power Dissipation 1W
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 120V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 250mA 2V
Current - Collector Cutoff (Max) 10μA
Vce Saturation (Max) @ Ib, Ic 1V @ 50mA, 500mA
Collector Emitter Breakdown Voltage 120V
Transition Frequency 30MHz
Collector Base Voltage (VCBO) 120V
Emitter Base Voltage (VEBO) 4V
RoHS Status Non-RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $31.112000 $31.112
10 $29.350943 $293.50943
100 $27.689569 $2768.9569
500 $26.122235 $13061.1175
1000 $24.643618 $24643.618
JANTX2N5682 Product Details

JANTX2N5682 Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 40 @ 250mA 2V.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1V @ 50mA, 500mA.An emitter's base voltage can be kept at 4V to gain high efficiency.A transition frequency of 30MHz is present in the part.In extreme cases, the collector current can be as low as 1A volts.

JANTX2N5682 Features


the DC current gain for this device is 40 @ 250mA 2V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 4V
a transition frequency of 30MHz

JANTX2N5682 Applications


There are a lot of Microsemi Corporation JANTX2N5682 applications of single BJT transistors.

  • Driver
  • Interface
  • Inverter
  • Muting

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