JANTX2N5682 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website
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JANTX2N5682 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
20 Weeks
Lifecycle Status
IN PRODUCTION (Last Updated: 1 month ago)
Contact Plating
Lead, Tin
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-205AD, TO-39-3 Metal Can
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-65°C~200°C TJ
Packaging
Bulk
Published
2002
Series
Military, MIL-PRF-19500/583
JESD-609 Code
e0
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
Subcategory
Other Transistors
Max Power Dissipation
1W
Terminal Position
BOTTOM
Terminal Form
WIRE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Qualification Status
Qualified
Number of Elements
1
Configuration
SINGLE
Power Dissipation
1W
Transistor Application
AMPLIFIER
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
120V
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 250mA 2V
Current - Collector Cutoff (Max)
10μA
Vce Saturation (Max) @ Ib, Ic
1V @ 50mA, 500mA
Collector Emitter Breakdown Voltage
120V
Transition Frequency
30MHz
Collector Base Voltage (VCBO)
120V
Emitter Base Voltage (VEBO)
4V
RoHS Status
Non-RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$31.112000
$31.112
10
$29.350943
$293.50943
100
$27.689569
$2768.9569
500
$26.122235
$13061.1175
1000
$24.643618
$24643.618
JANTX2N5682 Product Details
JANTX2N5682 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 40 @ 250mA 2V.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1V @ 50mA, 500mA.An emitter's base voltage can be kept at 4V to gain high efficiency.A transition frequency of 30MHz is present in the part.In extreme cases, the collector current can be as low as 1A volts.
JANTX2N5682 Features
the DC current gain for this device is 40 @ 250mA 2V the vce saturation(Max) is 1V @ 50mA, 500mA the emitter base voltage is kept at 4V a transition frequency of 30MHz
JANTX2N5682 Applications
There are a lot of Microsemi Corporation JANTX2N5682 applications of single BJT transistors.